FRAM is a non-volatile memory that utilizes the properties of ferroelectric materials to store data. Ferroelectric materials have the ability to reversibly change the direction of their polarization in response to an electric field and can therefore be used to store digital information. Its ferroelectricity of ferroelectrics is characterized by non-volatility, low power consumption, and fast reading of data. GXSC has mass-produced ferroelectric storage devices with capacities of 128Kb and 2Mb.