The GX85RS2MC, which can be easily replaced with SRAM, is compatible with the MB85RS2MT.

Traditional SRAM is a volatile memory, meaning it requires a continuous power supply to maintain the data stored within it; once the power is cut off, the data is lost. In contrast, non-volatile memory (such as flash memory) can retain data even without power. Non-volatile memory compatible with SRAM can be achieved using ferroelectric random-access memory (FRAM). FRAM combines ferroelectric technology with silicon gate CMOS process technology to form non-volatile memory cells, which retain their state even after power loss.

Ferroelectric memory is a type of memory with non-volatile and random access characteristics. Non-volatility allows data to be retained during power outages, while random access enables fast data writing. Since ferroelectric memory can safely store data being written during power failures and outages, it ensures the security of parameter information and log data recorded in the device. Applications using ferroelectric memory products are widely adopted in fields such as factory automation, measurement equipment, ATMs, and medical devices.

When using SRAM to record data, a backup battery is required to prevent sudden power outages. Since ferroelectric memory features non-volatility, high-speed byte-level read/write operations, and high read/write endurance, this solution replaces SRAM with ferroelectric memory, eliminating the need for a battery. Removing the battery not only reduces product component costs and battery maintenance costs but also helps optimize product size.

GX85RS2MC Performance Parameters:

• Capacity: 2M bits, with SPI interface;

• Operating frequency: 25 MHz;

• High-speed read capability: supports 40 MHz high-speed read commands;

• Operating temperature range: -40°C to 85°C;

• Package type: 8-pin SOP package, RoHS compliant;

• Performance compatible with MB85RS2MT (Fujitsu) and FM25V20A (Cypress);