Ferroelectric memory GX85RS128 is comparable to MB85RS128/FM25V01 and is used in switches.

Switches are core devices for network data transmission, responsible for critical tasks such as packet forwarding, storage, and processing. With the explosive growth of network traffic and the increasing demands for data real-time performance and reliability, traditional storage technologies are gradually revealing their limitations when addressing the complex application scenarios of switches.

In modern switch devices, the core requirements for configuration information storage systems are:  

1. Millions of frequent writes (real-time updates of routing tables/VLAN configurations)  

2. Zero-latency preservation (to prevent configuration loss due to power outages)  

3. Data retention for over 15 years (to meet the lifespan requirements of telecom-grade equipment)

For the complex application scenarios of switches, ferroelectric memory‘s ultra-high-speed read/write capabilities, near-infinite erase/write cycles, high reliability, interference resistance, and low-power design perfectly align with the application requirements of switches in modern network environments. The GXSC ferroelectric memory GX85RS128, comparable to MB85RS128/FM25V01, features zero latency, zero wear, and zero wait time, making it the next-generation storage solution.

Switches must complete data packet reception, storage, and forwarding operations within extremely short timeframes. During network traffic peaks, a massive influx of data packets can overwhelm storage devices with insufficient read/write speeds, leading to data transmission delays and packet loss. The GX85RS128‘s storage cells support 1E6 read/write operations, operate at a frequency of up to 25MHz, and support 40MHz high-speed read commands. This ultra-high-speed read/write capability enables switches to quickly process large volumes of data packets, reduce data waiting time in the cache, and significantly improve data forwarding efficiency.

Unlike traditional flash memory with limited erase/write cycles, ferroelectric memory theoretically supports unlimited erase/write cycles, effectively extending the service life of switches and reducing maintenance costs caused by storage device failures. Additionally, the SF25C20 consumes extremely low power during operation, only 4.2 mA, and 9 μA in standby mode, making it particularly suitable for power-sensitive edge computing switches and large-scale switch clusters deployed in data centers.

Conclusion: Three reasons to choose the GX85RS128 • Zero-risk replacement: hardware compatibility + no driver modifications required • Never lose configuration: write speed outperforms any power outage • Domestic supply chain assurance: 100% domestically sourced supply chain, stable supply, and short lead times