Application of 4-channel C/X/Ku band beamformer GXAR1000 replacing ADAR1000 in phased array radar

In modern satellite communication, 5G millimeter wave systems, and radar applications, phased array radar has advantages such as no mechanical scanning, fast beam agility, multi-target tracking, and strong anti-interference ability. Beamforming has become a key technology for improving signal coverage, enhancing signal-to-noise ratio, and achieving spatial multiplexing.

The traditional discrete amplitude and phase control scheme has problems such as complex design, large volume, and high power consumption, which are difficult to meet the current demands for high performance and miniaturization. This article recommends a 4-channel C/X/Ku band beamformer GXAR1000 to replace ADAR1000 in phased array radar applications. GXAR1000 has demonstrated excellent performance and engineering value in satellite communication and phased array radar systems.

For phased array applications, the beamformer GXAR1000 supports a working frequency range of 5GHz to 18GHz, covering the C-band, X-band, and Ku band. The chip integrates 4 receiving channels, 4 transmitting channels, and corresponding power synthesis/distribution networks, making it a highly integrated silicon-based beamforming chip. Both its receiving and transmitting channels support amplitude and phase control, with a phase accuracy of 7 bits and support for phase control with an interval of 2.8 ° within 360 °; The amplitude accuracy is 6 bits and supports amplitude control with an interval of 0.5 dB within a dynamic range of 31.5 dB.

The GXAR1000 adopts 4-wire SPI logic for register configuration and control, which can configure the amplitude and phase of each channel, support bias adjustment, on/off control of each channel, and transmit/receive switching. At the same time, a single chip has two address lines to achieve serial control of up to four multifunctional chips in applications.

The functions of GXAR1000 are introduced as follows:

Internally supports beam storage, making it easy to quickly switch beam states.

The transmission and reception are controlled by a single pin, making it easy to quickly switch between transmission and reception states.

Supports power modulation and can provide bias or logic control levels for off chip PA, LNA, TR switch, fifth channel attenuator, fifth channel delay, etc.

Integrated temperature compensation to reduce performance differences between high and low temperatures.

Integrated four channel power detection for convenient system monitoring.

The chip is powered by a 3.3V main power supply, with 5V and -5V providing power for the power modulation section. The SPI digital interface is 3.3V logic. Negative pressure -5V is used for generating negative pressure in the power modulation section (if the power modulation function is not used, -5V voltage and 5V voltage can be omitted).