GXSC Ferroelectric Memory Replaces FM25V20A/MB85RS2MT to Enable Millisecond-Level Temperature Control + Power-off Protection in Thermostats

The temperature regulator (thermostat) on the manufacturing production line requires precise temperature control to improve product qualification rates, reliability, and production efficiency.

The thermostat compares the current measured temperature obtained from sensors with the target temperature and performs calculations and adjustments based on the deviation. It is an indispensable device in temperature control processes such as those in molding machines. The control objective of the thermostat is to align the current value with the target value, requiring rapid attainment of the target. Additionally, in the event of equipment failure, real-time recording of temperature changes in locations such as within the furnace is necessary to facilitate proper handling upon recovery.

If traditional EEPROM memory is used, insufficient performance may lead to malfunctions. In terms of rewrite endurance, both ferroelectric memory and SRAM can meet the requirements, while ferroelectric memory‘s advantage lies in its ability to back up data without a battery even if the system loses power due to a fault.

The GXSC ferroelectric memory utilizes ferroelectric technology and silicon-gate CMOS process techniques to store data, enabling non-volatile storage without battery backup. This eliminates the risk of data loss in SRAM during power outages. Even in the event of prolonged power interruptions or unexpected shutdowns, it can quickly recover from faults.

The GXSC ferroelectric memory supports up to 1E11 read/write operations, far surpassing the endurance of traditional EEPROM and Flash, significantly reducing update time. It also features a high-speed read command at 40MHz, enabling rapid response to data read requests and greatly enhancing the data read speed of sensor network devices. The chip boasts exceptional data retention capability, maintaining data for 10 years at 85°C and up to 200 years at 25°C under normal temperature conditions.

The low-power design of the GXSC ferroelectric memory stands out in comparison to the FM25V20A/MB85RS2MT. With a maximum power consumption of only 5mA and a standby current as low as 7μA, it reduces the frequency of charging or replacing batteries in thermostats.

Summary: By adopting the GXSC ferroelectric memory, the product‘s reliability—such as precision and lifespan—is enhanced, while also reducing the need for peripheral circuits required by batteries or capacitors. This results in a more streamlined circuit design, helping to lower customers‘ development costs.