GXSC ferroelectric memory SF25C20 replaces MB85RS2M/FM25V20 for sensor collector application

The high-performance storage characteristics of ferroelectric memory make it widely used in various sensing collectors, covering industrial data acquisition, environmental monitoring, automotive electronics, intelligent instruments and other fields, providing highly reliable data storage solutions for different scenarios.

Due to the real-time acquisition, conversion, and storage tasks of physical quantities such as temperature, pressure, voltage, and vibration undertaken by the sensor collector, the storage module needs to adapt to real-time data writing under high-frequency acquisition, power down data preservation under complex working conditions, low-power requirements for long-term operation, and withstand extreme environments such as wide temperature and electromagnetic interference. GXSC‘s ferroelectric memory SF25C20 provides a highly reliable and efficient solution for data storage in sensor collectors.

The core technology of GXSC ferroelectric memory SF25C20 is the formation of non-volatile storage units using ferroelectric process and silicon gate CMOS process technology. Its performance is compatible with MB85RS2MT (Fujitsu) and FM25V20A (Cypress), and it can reduce power consumption and extend battery life in some portable data acquisition applications, outdoor environments that rely on battery power and are susceptible to extreme weather conditions. 

The operating voltage range of ferroelectric memory SF25C20 is 2.7V to 3.6V, with a minimum standby power consumption of only 9 microamperes. It can reliably and without delay store data at low currents, preventing data loss after power failure. In addition, SF25C20 is a non-volatile memory that provides data storage capability in all power modes. With FRAM, there is no need to use separate EEPROM and battery powered SRAM.

Introduction to SF25C20 Performance Parameters:

• Capacity: 2M bits, providing SPI interface;

The operating frequency is 25 megahertz;

• High speed read feature: Supports 40MHz high-speed read commands;

• Working environment temperature range: -40 ℃ to 85 ℃;

• Packaging form: 8-pin SOP packaging, compliant with RoHS;

• Performance compatible with MB85RS2MT (Fujitsu) and FM25V20A (Cypress);

With the rapid development of the Internet of Things and Industry 4.0 technology, sensor collectors are evolving towards high frequency, miniaturization, long battery life, and high reliability. High performance storage modules have become the core support for system upgrades. The ferroelectric memory SF25C20 provides a cost-effective integrated storage solution for sensor collectors with high-speed SPI read and write, non-volatile power down protection, ultra-low power consumption, and industrial grade stability.