The memory cell of the ferroelectric memory GX85RS2MC can be used for 1E6 read/write operations. The high-speed write feature ensures that the collector‘s data is stored without delay, and t...

GXSC ferroelectric memory is a ferroelectric process and silicon gate CMOS process technology to form a non-volatile memory cell that retains contents even when power is lost. Combining the a...

The low-power, low-noise, highly integrated GX1220 is ideally suited for BTS cell formation, and the GX1220 can be used as a 100% software/hardware replacement for the ADS1220.The device h...

Electronic loads are instruments used to simulate various load conditions for testing and evaluating power supplies, batteries and other power supply devices. The voltage reference source provides a...