Ferroelectric memory GX85RS128 replaces MB85RS128/FM25V01 for pressure sensor application
Time:2025-10-28
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Pressure sensors are key components for converting physical quantities and electrical signals. They not only need to accurately collect pressure data, but also need to reliably store calibration parameters, historical data, and fault information. The core requirements for storage devices in these scenarios are focused on four dimensions: non-volatile, high read/write speed, low power consumption, and resistance to harsh environments. The storage solution of traditional pressure sensors often has obvious shortcomings: using EEPROM has slow read and write speeds and cannot adapt to high-speed pressure sampling scenarios.
The core technology of the ferroelectric memory GX85RS128 is the formation of non-volatile storage units using ferroelectric and silicon gate CMOS processes. It combines the high-speed read and write characteristics of SRAM with the non-volatile advantages of EEPROM, enabling power-off data storage without the need for backup batteries. The 128K storage capacity can meet the parameter and data storage needs of the vast majority of pressure sensors. The GX85RS128 can achieve up to 1 million erasures and data retention for 10 years at 85 ℃ (200 years at 25 ℃), enabling stable storage of data in these harsh environments. Compared to other types of memory such as flash memory or EEPROM, ferroelectric memory has more advantages in terms of data storage reliability.

The GX85RS128 operates within a voltage range of 2.7V to 3.6V, with a minimum standby power consumption of only 9 microamperes. It can reliably and without delay store data at low currents, preventing data loss in the event of a pressure sensor power failure. This chip can replace Fujitsu MB85RS128 and Cypress FM25V01 with PIN TO PIN, and its performance is equally excellent in the case of price advantage.
Introduction to the main parameters of GX85RS128:
• Capacity: 128Kb
Interface type: SPI interface (Mode 0 and Mode 3)
• Working voltage: 2.7V to 3.6V
• Operating frequency: 25MHz
• Power consumption: 4.2mAh, 9uA (standby)
Data retention: 10 years @ 85 ℃ (200 years @ 25 ℃)
• High speed read feature: Supports 40MHz high-speed read commands
• Working environment temperature range: -40 ℃ to 85 ℃
• Packaging form: 8-pin SOP packaging, compliant with RoHS
Replace Fujitsu MB85RS128 and Cypress FM25V01





