Low-noise amplifier GX1109 replacing FW1109 for distributed antenna systems

Distributed antenna systems serve as the infrastructure for modern communication, ensuring stable signals across different areas in large buildings and transportation hubs, thereby facilitating smooth communication and data transmission. The domestically produced 0.5-6GHz low-noise amplifier, with its performance advantages, enhances signals, reduces noise, addresses issues in signal transmission, and achieves better signal coverage and communication quality.

The GX1109 amplifier is manufactured using GaAs pHEMT technology, featuring low noise and a wide operating frequency range of 0.5GHz to 6GHz. With ultra-wideband coverage, it encompasses mainstream communication bands such as IoT, mobile communications, 3G/4G, and 5G NR. Designed specifically for broadband communication scenarios, this high-performance amplifier boasts core advantages including multi-band wideband coverage, high gain with low temperature drift, strong anti-interference suppression, and low-power integrated design. Compared to traditional single-band amplifiers, the GX1109 eliminates the need for multi-chip amplifier assembly, achieving multi-band signal amplification with a single chip.

The GX1109 integrates on-chip input/output matching circuits, featuring industry-leading noise figures and high linearity, making it highly suitable for use as a first-stage low-noise amplifier. The GX1109 incorporates Venable biasing functionality, enabling TDD applications, and is available in an 8-pin DFN package with dimensions of 2x2mm.

Product Features of the GX1109 Amplifier:

8-pin 2x2 mm DFN package

Operating frequency 0.5GHz to 6GHz

Noise Figure NF ≤ 0.85dB (0.5GHz to 5GHz)

Gain >20dB (0.5GHz to 5GHz)

Output third-order intercept point OIP3 > 33.5 dBm @ 70mA current, 2.6GHz

Shutdown Mode Pin, 1.8V TTL Logic

Supply voltage: 3V to 5V; no -Vgg required

Maintain the off state under high input power drive

unconditional stability